Semiconductor device having a pedestal

ABSTRACT

A graded-channel semiconductor device (10) is formed in a pedestal (12). The pedestal (12) is formed on a substrate (11) and improves the electrical characteristics of the device (10) compared to conventional device structures. The pedestal (12) has sides (13) that are bordered by a first dielectric layer (24) to provide electrical isolation. An interconnect structure (90) can be optionally formed in conjunction with the formation of the device (10). The interconnect structure (90) has a plurality of conductors (60, 97) that can be used to transport electrical signals across the device (10).

BACKGROUND OF THE INVENTION

This invention relates, in general, to insulated gate field effecttransistors, and more particularly to short channel insulated gate fieldeffect transistors.

Semiconductor devices such as insulated gate field effect transistor(IGFET) devices are becoming increasingly important in low voltageapplications. As IGFET devices are scaled to smaller and smallerdimensions, manufacturers must refine transistor designs to maintainoptimum device performance. Typically, in IGFET devices having channellengths in the sub-micron range, manufacturers must carefully fabricatedrain regions to avoid performance degradation problems such as hotcarrier injection, drain leakage, punch-through, and the like.

In IGFET devices having channel lengths of about one micron, many deviceperformance problems can be corrected by forming a lightly-doped-drain(LDD) region. The LDD region acts to lower the electric field in thechannel region near the drain region. This reduced electric fieldimproves threshold voltage stability by reducing hot carrier injectioninto the gate oxide layer overlying the channel region. However, the LDDregion causes a reduction in performance because of an increase insource resistance, which negatively impacts transconductance. Also, asthe channel length approaches 0.5 microns and below, drain engineeringtechniques (e.g., LDD regions) are not as effective in preventingperformance degradation.

Additionally, manufacturers have used counter-doped source and drainregions to reduce sub-surface punch-through in short channel devices.These counter-doped regions are often referred to as "halo" regions.Although the halo regions are effective in reducing punch-through, theydecrease carrier mobility in the channel region thereby degrading drivecurrent. Also, the halo regions increase junction capacitance, whichdegrades switching speed performance.

Another approach to preventing performance degradation includes placinga higher doped region in the channel region between the source and drainregion and extending from the surface down into the bulk semiconductormaterial. This higher doped region is of the same conductivity type asthe channel region. Although this approach is effective in reducingpunch-through, it also decreases carrier mobility in the channel region,which degrades drive current. In an alternative but similar approach,the higher doped region is placed in the channel region below thesurface and contacting both the source region and the drain region. Thisalternative approach improves drive current capability but suffers fromreduced breakdown voltage performance and a higher junction capacitance,which in turn degrades switching performance.

As is readily apparent, structures and methods are needed that overcomeat least the above problems found in the prior art. It would beadvantageous to manufacture such structures in a cost effective andreproducible manner. Additionally, it would be of further advantage forsuch structures to operate bi-directionally.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-8 illustrate enlarged cross-sectional views of a graded-channelsemiconductor device at various stages of fabrication in accordance withthe present invention;

FIG. 9 illustrates an enlarged cross-sectional view of an alternateembodiment of the graded-channel semiconductor device of the presentinvention; and

FIGS. 10-12 illustrate enlarged cross-sectional views of an interconnectstructure at various stages of fabrication according to the presentinvention.

DETAILED DESCRIPTION OF THE DRAWINGS

In general, the present invention relates to a graded-channelsemiconductor device suitable for sub-micron channel length designs. Thedevice includes a source region and a drain region formed in a body ofsemiconductor material, with the body of semiconductor material being ofopposite conductivity. The body of semiconductor material is firstformed into a pedestal structure to improve the electricalcharacteristics of the graded-channel semiconductor device. In addition,the device has a doped region formed between the source region and thedrain region to improve the punch-through resistance of the device. Themethod for forming the graded-channel semiconductor device as describedbelow allows a device to be formed that has an effective channel lengththat is smaller than the minimum geometries that are possible usingconventional photolithographic techniques. The device also exhibitsimproved performance characteristics compared to prior art structures.

The present invention also provides a conductive interconnect structurethat can be used in conjunction with the graded-channel semiconductordevice or in other semiconductor device applications. The interconnectstructure can be used to provide electrical connections betweenneighboring device structures such that the electrical connections havean improved pitch. The pitch of an interconnect structure is the totalwidth required to form a conductive layer and the space necessary toelectrically isolate the conductive layer from neighboring conductivelayers. The interconnect structure is well suited for use with thegraded-channel semiconductor device of the present invention because theprocess to form the interconnect structure is easily integrated into theprocess flow to form the graded-channel semiconductor device.

Turning now to the drawings to provide a more detailed description, FIG.1 is provided to illustrate the features of a graded-channelsemiconductor device, a semiconductor device, or a device 10 accordingto the present invention. For purposes of this description, device 10 isan n-channel IGFET device. This is intended as an example only and asthose skilled in the art will appreciate, the present invention appliesalso to p-channel devices. Alternatively, the structure according to thepresent invention applies to complementary p-channel/n-channelconfigurations as well.

Device 10 is a semiconductor device formed in a semiconductor substrate11 and comprises a gate structure 20. Gate structure 20 is used tomodulate a channel 25 between a source region 43 and a drain region 44.A significant feature of device 10 is that source region 43 and drainregion 44 are formed in a body of semiconductor material that isarranged as a pedestal 12 as shown in FIG. 1. Because portions of device10 are formed in pedestal 12, many of the electrical characteristics ofdevice 10 are improved. For example, the physical isolation provided todevice 10 by pedestal 12 reduces the effects of leakage currents andvoltage potentials that may be present in the underlying substrate 11.As a result, the breakdown voltage is significantly improved and theeffects of parasitic bipolar structures are significantly reduced.

Device 10 also has a doped region 18, which is used to improve thepunch-through resistance between source region 43 and drain region 44.Doped region 18 is formed below a major surface 14 of pedestal 12 anddoped region 18 has a varying dopant concentration throughout asdescribed below to maximize the ability of doped region 18 to preventpunch-through and adjust the threshold voltage of device 10.

As shown in FIG. 1, device 10 further comprises a buried interconnectregion 19, a plug contact 21, and a plug contact 22. These structuresare used as part of an optional interconnect structure to provideelectrical connections for device 10 or neighboring device structures(not shown). The interconnect structure can also be used to electricallycouple voltages to substrate 11 or to various doped regions formed insubstrate 11. A further description of the interconnect structure andits applications will be provided shortly.

A more detailed description of the composition and function of elementsof device 10 as shown in FIG. 1 is now provided. Device 10 includes asemiconductor substrate, a body of semiconductor material, or substrate11, which comprises a semiconductor layer, a diffused well, a substrateregion, an epitaxial region on a substrate, or the like. For ann-channel device, substrate 11 typically comprises a lightly dopedepitaxial layer on a heavily doped substrate. The epitaxial layer havinga boron doped (i.e., p-type conductivity) concentration having abackground dopant concentration typically in a range from about 1.5×10¹⁵atoms/cm³ to about 2.0×10¹⁶ atoms/cm³. Methods for forming substrate 11are well known.

Device 10 also includes source region 43 and drain region 44 that extendfrom major surface 14 to a depth of about 0.1 microns to about 0.3microns. Source region 43 and drain region 44 are n-type conductivityregions having a surface concentration on the order of 1.0×10²⁰atoms/cm³. Source region 43 and drain region 44 are, for example, spacedapart a distance in a range from about 0.25 microns to 0.5 microns. Asphotolithographic techniques evolve to economically produce smallerdimensions, this distance is scaleable according to classic metal-oxidesemiconductor (MOS) scaling techniques.

Gate structure 20 of device 10 is formed adjacent to channel region 25and includes, for example, a region of conductive material 38electrically insulated from channel region 25 by gate dielectric layer39. Gate dielectric layer 39 preferably comprises an oxide and has athickness in a range from about 30 angstroms to about 100 angstroms. Tomodulate channel region 25, a voltage potential is placed on conductivematerial 38 using a gate electrode 70. Gate electrode 70 is formed froma conductive material, which improves the electrical characteristics ofconductive material 38.

A portion of conductive material 38 overlaps at least a portion of thejunction formed by source region 43 and pedestal 12 and at least aportion of the junction formed by drain region 44 and pedestal 12. Byoverlapping a portion of source region 43 and drain region 44, gatecontrol of gate structure 20 is effective across channel region 25. Thisalso significantly enhances device reliability and manufacturability.Insufficient overlap results in erratic manufacturing yields anddegrades device performance.

Gate structure 20 also includes a second thermal oxide layer 34 andfirst spacers 37, which are used to provide physical and electricalisolation between gate electrode 70 and electrodes 71 and 72. Electrodes71 and 72 are electrically coupled to source region 43 and drain region44 respectively. In addition, FIG. 1 illustrates the use of secondspacers 47, which may be optionally formed to provide further isolationbetween gate electrode 70 and electrodes 71 and 72.

According to the present invention, a doped region 18 is formed inchannel region 25 and is vertically spaced apart from (i.e., it does notdirectly contact) major surface 14. Additionally, doped region 18 isboth vertically and laterally spaced apart from source region 43 anddrain region 44. Further, the lateral extension of doped region 18 isdefined independently of the distance between source region 43 and drainregion 44.

Doped region 18 is of the same conductivity type as pedestal 12, but hasa higher dopant concentration. Additionally, doped region 18 extendsinto pedestal 12 to a depth greater than about 0.3 microns. Preferably,doped region 18 is a region having a dopant concentration greater thanor equal to approximately 3.0×10¹⁷ atoms/cm³ (i.e., doped region 18preferably has a dopant concentration at least an order magnitudegreater than the background concentration of pedestal 12 and substrate11).

Preferably, source region 43 and drain region 44 are self-aligned todoped region 18 in order to provide bi-directional device operation(i.e., doped region 18 is substantially centrally located between sourceregion 43 and drain region 44). Preferably, doped region 18 is at least125 angstroms below major surface 14 with a distance of about 800angstroms preferred. According to the present invention, the distancethat doped region 18 is spaced from major surface 14 contributes toestablishing the threshold voltage of graded-channel semiconductordevice 10.

Doped region 18 provides a localized area of charge that functions,among other things, to enhance punch-through resistance. Also, becausedoped region 18 is spaced apart from source region 43 and drain region44, device 10 exhibits improved breakdown voltage characteristics,improved switching speeds due to reduced junction capacitance, andimproved resistance to hot-carrier injection effects compared to priorart structures where the center doped region contacts the source anddrain region. Additionally, because doped region 18 is spaced apart frommajor surface 14, device 10 exhibits a lower threshold voltage andimproved drive capability (i.e., higher transconductance) compared toprior art structures having substantially constant channel doping in thecenter of the channel that extends all the way to the surface (i.e.,extends completely to the surface of the channel region).

The location of doped region 18 and thickness of gate dielectric layer39 can be varied to produce devices with various characteristics. Forexample, with doped region 18 spaced a distance of about 1,125 angstromsfrom major surface 14 and with gate dielectric layer 39 having athickness of about 90 angstroms, device 10 exhibits a leakage current(Idss) on the order of 40 nano-amps/micron (at a Vds of 1.8 volts), athreshold voltage on the order of 165 millivolts, a peaktransconductance on the order of 65 Siemens/meter, a drive current(Idsat) on the order of 790 micro-amps/micron (at a Vds of 3.3 volts),555 micro-amps/micron (at a Vds of 2.5 volts), and a breakdown voltage(BVdss) on the order of 7.5 volts.

With doped region 18 spaced a distance of about 800 angstroms from majorsurface 14 and with gate dielectric layer 39 having a thickness of about90 angstroms, graded-channel device 10 exhibits an Idss on the order of1.0 nano-amp/micron (at a Vds of 1.8 volts), a threshold voltage on theorder of 300 millivolts, a peak transconductance on the order of 60Siemens/meter, an Idsat on the order of 730 micro-amps/micron (at a Vdsof 3.3 volts), an Idsat on the order of 500 micro-amps/micron (at a Vdsof 2.5), and a BVdss on the order of 8.0 volts.

With doped region 18 spaced a distance of about 150 angstroms from majorsurface 14 and with gate dielectric layer 39 having a thickness of about90 angstroms, graded-channel device 10 exhibits an Idss on the order of1.0 pico-amp/micron (at a Vds of 1.8 volts), a threshold voltage on theorder of 575 millivolts, a peak transconductance on the order of 53Siemens/meter, an Idsat on the order of 620 micro-amps (at a Vds of 3.3volts), an Idsat on the order of 400 micro-amps/micron (at a Vds of 2.5volts), and a BVdss on the order of 8.25 volts. All of the aboveexamples are drawn with dimensions such that the width of gate structure20 is about 0.5 microns.

In contrast to the above examples, comparable prior art structureshaving a 0.5 micron drawn gate dimension and a 90 angstrom gate oxidetypically exhibit Idsat values on the order of 400 micro-amps/micron at3.3 volts and an Idss of about 1.0 nano-amp/micron. Comparable prior artstructures having a 0.35 micron drawn gate length and a 90 angstrom gateoxide typically exhibit Idsat values on the order of 450micro-amps/micron at 2.5 volts and an Idss of about 1.0 nano-amp/micron.As is readily apparent, device 10 featuring 1.0 nano-amp/micron Idsscapability also shows a significant improvement in Idsat compared to theprior art structures.

First dielectric layer 24 is used to provide electrical and physicalisolation between various elements of FIG. 1. For example, firstdielectric layer 24 electrically isolates source region 43 and drainregion 44 from any neighboring device structures. The electricalisolation provided by first dielectric layer 24 is comparable to the useof field oxide structures in conventional MOS devices. First dielectriclayer 24 is also used to provide electrical isolation as part of theinterconnect structure of the present invention as will become moreapparent with the description to follow.

Also shown in FIG. 1 are portions of an interconnect structure that canbe optionally formed in conjunction with device 10 of the presentinvention or with many conventional semiconductor device structures.Plug contact 21 comprises a plug region 73, which is used to provideelectrical coupling between well region 15 and a contact electrode 75.Plug contact 22 also comprises a plug region 73, which is used toelectrically couple buried interconnect region 19 to a contact electrode76. It should also be understood that plug contacts 21 or 22 could alsobe used to electrically couple a contact electrode (not shown) tosubstrate 11 and that plug contacts 21 and 22 are used to pass voltagelevels or electronic signals through a first dielectric layer 24.

Turning now to FIGS. 2-8, a preferred method for forming device 10 isdescribed. During the description pertaining to the formation of device10, details will be provided on how to form portions of an interconnectstructure. These details illustrate how the formation of theinterconnect structure can be integrated into the process flow of device10. A more elaborate description of the interconnect structure and itsformation will be provided below. FIG. 2 illustrates an enlargedcross-sectional view of substrate 11 at an early stage of processing.The upper portion of substrate 11 is preferably a lightly doped p-typebody of silicon and may be formed by a lightly doped p-type layer on aheavily doped p-type substrate. The formation of device 10 begins withthe formation of pedestal 12.

A first masking layer (not shown) is patterned on substrate 11, whichacts as a hard mask to define pedestal 12. Preferably, the first maskinglayer is a 800 angstrom to 2,000 angstrom thick film of silicon dioxidethat is grown on substrate 11 and patterned using a photolithographicprocess. A timed reactive ion etch (RIE) is used to remove the portionsof substrate 11 that are not covered by the first masking layer.Pedestal 12 is the remaining raised portion of substrate 11 that iscovered by the first masking layer. Pedestal 12 is elevated about 3,000angstroms to 10,000 angstroms above a surface 80 of substrate 11 and isabout 5,000 angstroms to 30,000 angstroms wide. The width of pedestal 12is defined as the distance between the sides 13 of pedestal 12 as shownin FIG. 2. Pedestal 12 further comprises a major surface 14 on whichportions of device 10 will be formed.

Following the removal of the first masking layer, a first thermal oxidelayer 16 with a thickness of about 100 angstroms to 500 angstroms isgrown on surface 80, sides 13, and major surface 14. If desired, aphotolithographic masking step, an implant step, and an anneal step canbe performed to form the optional buried interconnect region 19 as shownin FIG. 2. An arsenic implant dose on the order of 1.0×10¹⁵ atoms/cm² to1.0×10¹⁶ atoms/cm² and an implant energy on the order of 80 keV issuitable for forming buried interconnect region 19. Following theformation of buried interconnect region 19, first dielectric layer 24 isdeposited onto surface 80, sides 13, and major surface 14. Preferably,first dielectric layer 24 is deposited using well known depositiontechniques (e.g., low pressure chemical vapor deposition (CVD), plasmaenhanced CVD, etc.) and comprises a material such as silicon dioxideformed from the decomposition of tetraethylorthosilicate (TEOS). Firstdielectric layer 24 is about 4,000 angstroms to 13,000 angstroms thickand should be thick enough to cover sides 13 of pedestal 12.

Referring now to FIG. 3, first dielectric layer 24 is then planarized toprovide a first planar surface 81. First dielectric layer 24 can beplanarized with either a chemical mechanical polishing (CMP) techniqueor a photolithographic negative-layer (n-layer) process, both of whichare well known. The planarizing process preferably leaves a portion offirst dielectric layer 24 and first thermal oxide layer 16 on majorsurface 14 of pedestal 12. It should also be understood that all offirst dielectric layer 24 and first thermal oxide layer 16 can beremoved from major surface 14 during the planarizing process. Wellregion 15 is then formed by implanting substrate 11 through first planarsurface 81 and is used to prevent the electrical inversion of surface 80between device 10 and possible surrounding devices not shown. A boronimplant dose on the order of 1.0×10¹² atoms/cm² to 1.0×10¹³ atoms/cm²and an implant energy on the order of 60 keV is suitable for formingwell region 15.

Still referring to FIG. 3, as part of the interconnect structure of thepresent invention, openings may be optionally formed in first dielectriclayer 24 for the formation of plug contacts 21 and 22. Again, theformation of the interconnect structure is not required for theformation of device 10. A photolithographic masking pattern (not shown)is used to expose the portions of first dielectric layer 24 where plugcontacts 21 and 22 are formed. An RIE etch is then use to remove theexposed portions of first dielectric layer 24 and expose portions of theunderlying well region 15 and buried interconnect region 19.

A first coupling layer 17 is then formed on first planar surface 81 andin the openings of plug contacts 21 and 22 as shown in FIG. 3. Firstcoupling layer 17 is made from a conductive material and is usedprimarily to form plug regions 73. Plug regions 73 are used in plugcontacts 21 and 22 to electrically couple to well region 15 and buriedinterconnect region 19 respectively. First coupling layer 17 cancomprise a variety of conductive materials such as polysilicon, dopedsilicon, tungsten, cobalt, chromium, or the like. Such materials can bedeposited using a CVD process, a plasma enhanced chemical vapordeposition (PECVD) process, or by a sputtering process.

Referring now to FIG. 4, the portions of first coupling layer 17 onfirst planar surface 81 and over major surface 14 have been removed witheither an etch or a CMP process. This will electrically isolate each ofplug regions 73 from each other. Any remaining portions of firstdielectric layer 24 or first thermal oxide layer 16 on major surface 14of pedestal 12 are then removed. A first polysilicon layer 26 is thendeposited onto major surface 14 and first planar surface 81. Firstpolysilicon layer 26 is about 500 angstroms to 2,000 angstroms thick andis in direct physical contact with the silicon material of pedestal 12.First polysilicon layer 26 is also in contact with plug regions 73 ofplug contacts 21 and 22. A photolithographic masking pattern (not shown)and an RIE etch process are used to remove portions of first polysiliconlayer 26 to electrically isolate the portion of first polysilicon layer26 over pedestal 12 from the portions of first polysilicon layer 26 overplug regions 73. This electrical isolation is shown in FIG. 4 asopenings 27. After the formation of openings 27, the photolithographicmask is removed to allow further processing.

FIG. 5 illustrates substrate 11 at a subsequent step of manufacture. Inparticular, FIG. 5 shows substrate 11 with a second dielectric layer 28formed on first polysilicon layer 26 and the exposed portions of firstdielectric layer 24. Preferably, second dielectric layer 28 is a 4,000angstrom to 7,000 angstrom thick layer of silicon oxide that is formedfrom a CVD deposition process. A second planar surface 85 is then formedon second dielectric layer 28 using a CMP process. Second planar surface85 of second dielectric layer 28 is then patterned with aphotolithographic pattern (not shown) to form a gate opening 29, whichhas, for example, a width 30 on the order of 0.4 microns to 0.6 microns.Subsequent reference to the figures and the description will assume thatgate opening 29 is 0.5 microns wide. This establishes a drawn gatedimension. Techniques for forming gate opening 29 are well known in theart. As stated above, as photolithographic capabilities evolve toeconomically produce smaller dimensions, width 30 is scaleable usingclassic MOS scaling techniques.

To form gate opening 29, a reactive ion etch is used to remove theexposed portions of second dielectric layer 28 and first polysiliconlayer 26. Preferably, the RIE etch process includes a timed over etch sothat a portion of pedestal 12 at major surface 14 is also removed. Itshould also be understood that the RIE etch process can be modified sothat a thin portion of first polysilicon layer 26 is left in gateopening 29 so no part of pedestal 12 is removed.

FIG. 6 illustrates device 10 at a subsequent step of manufacture. Inparticular, FIG. 6 shows substrate 11 after second thermal oxide 34 hasbeen formed on the exposed portions of first polysilicon layer 26 andmajor surface 14. Second thermal oxide layer 34 is about 100 angstromsto 500 angstroms thick and can be formed by placing substrate 11 into ahigh temperature, oxidizing ambient. Temporary spacers 36 are thenformed by depositing a material such as a polysilicon layer (not shown)onto second planar surface 85 and into gate opening 29. The thickness ofthe polysilicon layer is selected based upon the desired width of eachtemporary spacer 36 and thus a desired aperture width 31 to subsequentlyform doped region 18 (see FIG. 1). For example, to provide an aperturewidth 31 of about 0.15 microns, the polysilicon layer has a thickness ofabout 1,750 angstroms. This is based on the well known relationship thataperture width 31 is approximately equal to width 30 minus two times thethickness of the polysilicon layer.

Once the second polysilicon layer is formed, the layer isanisotropically etched to form temporary spacers 36 as shown in FIG. 6.The anisotropic etch removes the portions of the polysilicon layer onmajor surface 14 and provides aperture width 31. The polysilicon layeris etched using, for example, well known reactive ion etching (RIE)techniques. Temporary spacers 36 provide the sub-photolithographicaspect of doped region 18. Alternatively, temporary spacers could beformed using silicon nitride.

Following the formation of temporary spacers 36, doped region 18 (seeFIG. 1) is formed preferably using ion implantation and annealingtechniques. For a 1.0 nano-amp/micron Idss device, doped region 18preferably is formed by a series of ion implants including, a firstboron implant dose of about 7.0×10¹² atoms/cm² at an energy of about 80keV (represented by region 35), a second boron implant dose of about7.0×10¹² atoms/cm² at 40 keV (represented by region 33), and a thirdboron implant dose of about 4.0×10¹¹ atoms/cm² at an energy of about 10keV (represented by region 32).

For a 1.0 pico-amp/micron Idss device, the first and second boronimplant are the same as above, but the third boron implant dose is onthe order of about 3.0×10¹² atoms/cm² at an energy of about 10 keV. Fora 40 nano-amp/micron Idss device, the first boron implant is the same asabove, but the second boron implant is on the order of 7.0×10¹²atoms/cm² at 50 keV and the third boron implant is not done (i.e.,region 32 is not formed). In general, the implant energy is selected fordoping regions 32, 33, and 35 so that once regions 32, 33, and 35 areannealed to form doped region 18, doped region 18 is spaced a distancefrom major surface 14 on the order of at least 125 angstroms.

Referring now to FIG. 7, following ion implantation, temporary spacers36 are removed using well known techniques. Next, a layer of siliconnitride (not shown) is deposited onto second planar surface 85 and intogate opening 29. The layer of silicon nitride is also formed on secondthermal oxide layer 34 overlying major surface 14. Then the layer ofsilicon nitride is anisotropically etched to form first spacers 37 asshown in FIG. 7. The anisotropic etch removes the layer of siliconnitride on second thermal oxide layer 34 over major surface 14. A wetetch is then used to remove the portions of second thermal oxide layer34 that were exposed by the anisotropic etch used to form first spacers37. The wet etch leaves portions of second thermal oxide layer 34between first spacers 37 and first polysilicon layer 26 on pedestal 12.The wet etch can also remove a portion of pedestal 12 to clean majorsurface 14 for subsequent processing.

A gate dielectric layer 39 is then formed as shown in FIG. 7.Preferably, gate dielectric layer 39 comprises a thermal oxide and has athickness on the order of about 30 angstroms to about 100 angstroms (90angstroms was used for the examples provided above). During theformation of gate dielectric layer 39, regions 32, 33 and 35 areannealed to activate the implanted dopant to form doped region 18.

Following the formation of gate dielectric layer 39, a layer ofconductive material 38 is formed over major surface 14, second planarsurface 85, and into gate opening 29. Conductive layer 38 preferablycomprises polysilicon or amorphous silicon and in this example, has athickness on the order of 4,000 angstroms. This thickness variesdepending on width 30 of gate opening 39. Methods for forming layer 38are well known. It should also be understood that the gate structure ofdevice 10 can be formed from other materials used in the semiconductorindustry such as cobalt, tungsten, molybdenum, or the like.

FIG. 8 illustrates device 10 at a subsequent step in manufacture. Inparticular, FIG. 8 shows substrate 11 after layer 38 has beenplanarized. For example, layer 38 is planarized using chemicalmechanical polishing (CMP) techniques, which are well known. After layer38 is planarized, a portion of layer 38 remains in gate opening 29 andbecomes a portion of gate structure 20 (see FIG. 1). The portion oflayer 38 that remains in gate opening 29 typically has a thickness onthe order of 3,500 angstroms to 6,000 angstroms.

Following the planarization of layer 38, portions of second dielectriclayer 28 are removed using, for example, conventional wet etchingtechniques to form the structure shown in FIG. 8. The portion of seconddielectric layer 28 overlying gate structure 20 and first polysiliconlayer 26 is removed. A portion of second dielectric layer 28 may be leftin openings 27 as shown in FIG. 8. A third dielectric layer 40 is thenformed on the exposed surfaces of gate structure 20 and first layer ofpolysilicon 26. Preferably, third dielectric layer 40 is about 100angstroms to 500 angstroms thick and is formed from the chemical vapordeposition of silicon dioxide.

Third dielectric layer 40 is used as a screen oxide for the subsequentimplant steps used to form a first doped region 41 and a second dopedregion 42. First doped region 41 is formed with a n-type dopant (e.g.,phosphorous) that is ion implanted into first polysilicon layer 26 andis performed to enhance the electrical characteristics of firstpolysilicon layer 26. Second doped region 42 is formed such that aportion of the dopant extends below major surface 14 into pedestal 12,which is used to form source region 43 and drain region 44 (see FIG. 1).Note that a portion of second doped region 42 also extends into plugregions 73, which only further serves to enhance the electricalcharacteristics of plug contacts 21 and 22. It should also be understoodthat the conductivity of plug contacts 21 and 22 could be doped to be ofopposite conductivity if p-channel devices (not shown) are formed onsemiconductor substrate 11.

In FIG. 8, only the areas of first doped region 41 and a second dopedregion 42 in first polysilicon layer 26 are shown. It should beunderstood that dopant will also enter portions of first dielectriclayer 28. A key feature of the implantation steps is that these stepsare self-aligned to gate structure 20. This allows gate structure 20 tooverlap source region 43 and drain region 44 after first doped region 41and a second doped region 42 have been annealed (as described below).This adds to device reliability and greatly enhances manufacturability.Additionally, this eliminates the need for source and drain extensions,which add processing steps and degrade device performance.

An implant dose on the order of 1.0×10¹⁵ atoms/cm² to 1.0×10¹⁶ atoms/cm²and an implant energy on the order of 60 keV is suitable for formingfirst doped region 41. An implant dose on the order of 1.0×10¹⁵atoms/cm² to 1.0×10¹⁶ atoms/cm² and an implant energy on the order of160 kev is suitable for forming second doped region 42. Again, thedopant from the implantation step used to form second doped region 42extends into pedestal 12 and is used to form source region 43 and drainregion 44. Following ion implantation, the implanted dopant of firstdoped region 41 and a second doped region 42 is activated usingconventional rapid thermal anneal techniques to form source region 43and drain region 44 as shown in FIG. 1. Preferably, source region 43 anddrain region 44 are formed so they are elevated above first surface 80of substrate 11. An anneal of about 40 seconds at about 1050° C. issuitable. Alternatively, an equivalent furnace anneal is used. After theanneal, doped region 18 has a width of less than 0.3 microns, with awidth on the order of 0.15 micron to about 0.25 micron being typical.

Referring now to FIG. 1, the final process steps of device 10 will beprovided. Third dielectric layer 40 is removed using a conventional wetetch process. Next, a spacer layer (not shown) is deposited onto gatestructure 20, first polysilicon layer 26, and first dielectric layer 28followed by a conventional reactive ion etch to form second spacers 47as shown in FIG. 1. The spacer layer preferably comprises siliconnitride, and the use of second spacers 47 is optional and can be used inthe formation of source electrode 71, drain electrode 72, and gateelectrode 70.

Next, source electrode 71, drain electrode 72, and gate electrode 70 areformed using, for example, conventional self-aligned silicidetechniques. Preferably, source electrode 71, drain electrode 72, andgate electrode 70 have a conductive layer 46 that is formed on allexposed surfaces of first polysilicon layer 26 and second polysiliconlayer 38. Conductive layer 46 is formed to enhance the electricalproperties of first polysilicon layer 26 and second polysilicon layer 38and comprises titanium silicide, cobalt silicide, or the like. The abovemethod provides a self-aligned graded-channel device 10 havingsub-photolithographic features. This provides a graded-channel devicehaving bi-directional high performance characteristics with an enhancedpunch-through resistance.

FIG. 9 illustrates an alternate configuration of a device according tothe present invention. FIG. 9 shows a dual gate n-channel device 50embodying many of the elements of the present invention. Dual gaten-channel device 50 is formed by two semiconductor devices, designatedby gate structure 20 and gate structure 59, which are formed in the samepedestal 12. The device of gate structure 20 has a source region 43, adrain region 44, and a doped region 18 all described above and shown inFIG. 1. The device of gate structure 59 is an additional device that isformed in conjunction with device 10 and uses a portion of drain region44 as its source and has its own drain region 51. Gate structure 20 andgate structure 59 act as the two input terminals of dual gate n-channeldevice 50, and dual gate n-channel device 50 is formed using the sameprocess as described above.

The present invention also provides for an interconnect structure orinterconnect methodology that can be used to provide electricalconnections within semiconductor devices and between neighboringsemiconductor device structures. A significant feature of theinterconnect structure is that it forms electrical connections at afiner pitch than is possible with conventional photolithographictechniques. An additional benefit of the interconnect structure of thepresent invention is that it is easily integrated into the process flowto form device 10 described above. In the following description, analternate method for forming device 10 is provided to further simplifythe integration of the formation of an interconnect structure into theprocess used to form device 10.

Turning now to FIG. 10, a general description of an interconnectstructure 90 will be provided. Interconnect structure 90 includes, inthis embodiment, a semiconductor device such as device 10 or 50described above. It should also be understood that the elements ofinterconnect structure 90 can be used with many conventionalsemiconductor devices having a structure different than device 10 or 50.Interconnect structure 90 comprises two conductive layers, a firstconductor 60 and a second conductor 97, that are used to transportelectrical signals or voltage potentials to neighboring devicesstructures (not shown). In FIG. 10, first conductor 60 and secondconductor 97 are shown in a repeating pattern across interconnectstructure 90 to demonstrate the high packing density or small pitch ofthe present invention.

As shown in FIG. 10, first conductor 60 comprises a conductive layer 96formed on second polysilicon layer 38. In the following method formaking interconnect structure 90, second polysilicon layer 38 is used toform part of first conductor 60. This is shown to demonstrate howinterconnect structure 90 can be integrated into the formation of gatestructure 20 of device 10. It should be understood that first conductor60 can be formed from a single layer of conductive material and that theuse of conductive layer 96 is optional.

Second conductor 97 comprises a conductive layer 95 formed on firstpolysilicon layer 26. In the following method for making interconnectstructure 90, first polysilicon layer 26 is used to form part of secondconductor 97. This is shown to demonstrate how interconnect structure 90can be integrated into the formation of device 10. It should beunderstood that second conductor 97 can be formed from a single layer ofconductive material and that the use of conductive layer 95 is optional.Conductive layers 95 and 96 preferably comprise a metallic compound madefrom materials such as cobalt, chromium, molybdenum, or titanium.

First conductor 60 is preferably formed from a layer of polysilicon thatis physically isolated from second conductor 97 by first spacers 37.First spacers 37 can be the same spacers used to define gate structure20 in FIG. 1. This simplifies the processing steps necessary to forminterconnect structure 90. First spacers 37 have an interior side, whichis defined as the side that physically contacts second polysilicon layer38. First spacers 37 also have an exterior side, which is defined as theportions of first spacers 37 that contact second conductor 97. As shownin FIG. 10, first conductor 60 has a width 61 that is defined as thedistance separating the interior side of first spacers 37. Secondconductor 97 has a width 62 that is defined as the width of the exteriorside of first spacers 37 minus the portion of first polysilicon layer 26that is lost due to the formation of second thermal oxide layer 34.Therefore, the effective pitch of the present invention is width 63,which is the sum of width 61 and the width of one first spacer 37. Theeffective pitch of interconnect structure 90 can also be defined as thewidth of one of first spacers 37 and the thickness of second thermallayer 34, plus the average width of first conductor 60 and secondconductor 97.

Referring to a conventional process to form a semiconductor device, thepitch of an interconnect layer refers to the width of the interconnectlayer plus the width of the space between neighboring lines of theinterconnect layer. For example, a conventional photolithographicprocess that has a minimum feature size of 0.5 μm is limited to a pitchof 1.0 μm (i.e., 0.5 μm for the interconnect layer and 0.5 μm for thespace to isolate the interconnect layer).

The dimensions of interconnect structure 90 of the present invention arenot limited by the photolithographic process and offer a much improvedpitch versus conventional processes. Since first conductor 60 and secondconductor 97 are self-aligned and separated by at least one spacer,there is no need to rely on the photolithographic process to physicallyisolate conductors 60 and 97. For example, if a photolithographicprocess with a minimum geometry capability of 0.5 μm is used to forminterconnect structure 90, then the pitch of the structure isapproximately 0.5 μm (i.e., 0.4 μm for either width 61 of firstconductor 60 or width 62 of second conductor 97, and approximately 0.1μm for spacer 37). Therefore, the average pitch of interconnectstructure 90 is substantially equal to the capability of thephotolithographic process used to define interconnect structure 90.

Beginning with FIG. 11, a method for forming interconnect structure 90in conjunction with device 10 of the previous narration will beprovided. This is done to avoid unnecessary repetition, but it shouldalso be understood that interconnect structure 90 can be formedindependently of device 10. Pedestal 12, buried interconnect region 19,first thermal oxide layer 16, plug regions 73, and first dielectriclayer 24 are formed in a similar fashion as provided above for device10. Second conductors 97 are formed in a slightly different manner thanin the method described above. First polysilicon layer 26 is depositedonto substrate 11 followed by the deposition of second dielectric layer28. Previously, first polysilicon layer 26 was patterned and etchedbefore the formation of second dielectric layer 28.

Second dielectric layer 28 is then planarized using a CMP process toprovide second planar surface 85. Following the planarization process,second dielectric layer 28 is then patterned using a photolithographicmask (not shown). A reactive ion etch is then used to remove portions ofsecond dielectric layer 28 and first polysilicon layer 26 to formopenings 65 as shown in FIG. 11. Openings 65 provide the physical andelectrical isolation in first polysilicon layer 26 to define the regionsof second conductor 97. Therefore, each of second conductors 97 shown inFIG. 10 is electrically isolated from each other and each can be used totransport a different electrical signal or voltage potential.

During the steps used to form openings 65, gate opening 29 is formed toexpose a portion of pedestal 12. Note, no additional process steps arerequired to form gate opening 29. The photolithographic mask is thenremoved and the exposed portions of pedestal 12 and first polysiliconlayer 26 are oxidized to form second thermal oxide layer 34. Since firstpolysilicon layer 26 is an electrically conductive layer, second thermaloxide layer 34 provides part of the necessary electrical isolationbetween first conductors 60 and second conductors 97. It is necessary toelectrically isolate second conductors 97 from the subsequent structuresformed in openings 65 as described below.

Referring now to FIG. 12, a description of the formation of firstconductors 60 in openings 65 will be provided. A layer of siliconnitride (not shown) is deposited onto substrate 11 and into openings 65and anisotropically etched to form first spacers 37. First spacers 37will have a width that is approximately equal to the thickness of thesilicon nitride layer from which first spacers 37 are formed. Theprocess to form first spacers 37 is the same as the process describedabove in the formation of device 10. As required for the formation ofdevice 10, a portion of second thermal oxide layer 34 on pedestal 12 isremoved and gate dielectric layer 39 is grown on major surface 14 ofpedestal 12. Next, a third polysilicon layer 66 is conformally depositedonto substrate 11 and onto gate dielectric layer 39. Third polysiliconlayer 66 is about 300 angstroms to 1,000 angstroms thick and is formedfor the following implantation steps used to form doped region 18 (seeFIG. 1). Additionally, a screen oxide (not shown) is thermally grownonto third polysilicon layer 66 and is about 50 angstroms to 300angstroms thick. A sequence of implantation steps, such as the onesprovided above, can be used to form doping region 32, 33, 35.

A wet etch process is then used to remove the screen oxide layer andexpose the underlying third polysilicon layer 66. It should beunderstood that the process steps used in the formation of gatedielectric layer 39 or doping regions 32, 33, and 35 are not a necessaryrequirement for the formation of interconnect structure 90. It ispossible to use interconnect structure 90 for other device structures sothat the processing steps particular to device 10 should be consideredoptional.

The method for forming interconnect structure 90 also provides aslightly different method of forming portions of device 10. As describedearlier, doping regions 32, 33, and 35 are formed by implanting pedestal12 through an aperture, the aperture being provided by spacers 36 madefrom polysilicon. In this alternate method, doping regions 32, 33, and35 are formed by implanting pedestal 12 through an aperture provided byfirst spacers 37, third polysilicon layer 66, and the screen oxidelayer.

Turning back to FIG. 10, the final processing steps to form interconnectstructure 90 will be provided. After the screen oxide layer is removed,a conductive material is deposited onto third polysilicon layer 66 toprovide the material used to form first conductor 60. For example,second polysilicon layer 38 can be deposited to fill openings 65. Thisstep is already provided in the method to form device 10 as secondpolysilicon layer 38 was used to fill gate opening 29. After deposition,either a CMP or an anisotropic etch process is used to remove theportions of second polysilicon layer 38 on second planar surface 85.This step physically and electrically isolates portions of secondpolysilicon layer 38 to form first conductors 60. It should also beunderstood that openings 65 and gate opening 29 can be filled with avariety of conductive materials such as polysilicon, amorphous silicon,tungsten, cobalt, chromium, or the like.

After the etch process, each of first conductors 60 is electricallyisolated from each other and is electrically isolated from secondconductors 97. As shown in FIG. 10, second conductors 97 can be used toelectrically couple to plug regions 73 in the formation of plug contacts21 and 22. It should also be understood that first conductors 60 andsecond conductors 97 can be used to carry electrical signals throughoutan integrated circuit (not shown) and do not necessarily have to becoupled to portions of device 10 such as plug contacts 21 and 22 or gatestructure 20.

To further enhance the electrical properties of first conductors 60 andsecond conductors 97, conductive layers 96 and 95 may be optionallyformed on first conductors 60 and second conductors 97 respectively.First the portions of second dielectric layer 28 on second conductors 97are removed using a conventional wet etch. Conductive layers 95 and 96are preferably formed from a silicidation process to form a metalcompound comprising titanium, cobalt, or similar material. First spacers37 provide an additional benefit in that they can be used in thesilicidation process to electrically isolate first conductors 60 andsecond conductors 97. First spacers 37 are preferably made from siliconnitride and thus the metal compound used to form conductive layers 95and 96 will not form along the surface of first spacers 37.

By now it should be appreciated that the present invention provides agraded-channel semiconductor device and an interconnect structure. Thepresent invention also provides a method for forming both structurestogether or forming each structure separately. The graded-channelsemiconductor device of the present invention offers many advantagesover conventional semiconductor devices such as improved punch-throughresistance, improved current densities at lower operating voltages, andimproved manufacturability. The interconnect structure of the presentinvention offers advantages such as an improved pitch width, which inturn increase the density of interconnect layers in the structure. Theseadvantages provide for a device that has improved functionality with alower manufacturing cost.

We claim:
 1. A semiconductor device comprising:a body of semiconductormaterial of a first conductivity type and having a surface; a pedestalon the surface of the body of semiconductor material, the pedestalhaving a major surface and sidewalls that are substantially orthogonalto the body of semiconductor material; a first doped region of a secondconductivity type formed in the pedestal and extending from the majorsurface; a second doped region of the second conductivity type formed inthe pedestal and extending from the major surface; a channel regionbetween the first doped region and the second doped region; a thirddoped region of the first conductivity type formed in the pedestal,wherein the third doped region is vertically spaced apart from the majorsurface, and wherein the third doped region is vertically and laterallyspaced apart from the first doped region and the second doped region;and a gate structure overlying the major surface and overlying thechannel region.
 2. The semiconductor device of claim 1 wherein the thirddoped region has a dopant concentration that is at least an order ofmagnitude higher than that of the body of semiconductor material.
 3. Thesemiconductor device of claim 1 wherein the third doped region is spaceda distance of at least 125 angstroms from the major surface.
 4. Thesemiconductor device of claim 1 wherein the third doped region issubstantially centered between the first doped region and the seconddoped region.
 5. The semiconductor device of claim 1 wherein the firstconductivity type is p-type and the second conductivity type is n-type.6. The semiconductor device of claim 1 wherein the first doped regionand the second doped region are elevated above the surface of the bodyof semiconductor material.
 7. The semiconductor device of claim 1wherein the pedestal has sides and the semiconductor device furthercomprises a dielectric layer formed along the sides of the pedestal. 8.The semiconductor device of claim 1 wherein the gate structure furtherincludes a thermal oxide layer and spacers.
 9. The semiconductor deviceof claim 8 wherein the gate structure further includes a conductivematerial formed between the spacers.
 10. The semiconductor device ofclaim 9 wherein the conductive material is a material selected from thegroup consisting of polysilicon, amorphous silicon, tungsten, cobalt, ortitanium.
 11. A semiconductor device comprising:a semiconductorsubstrate of a first conductivity type having a surface and a firstdopant concentration; a pedestal on the surface of the semiconductorsubstrate, the pedestal having a major surface and sides, wherein thesides of the pedestal are substantially orthogonal to the surface of thesemiconductor substrate; a dielectric layer formed along the sides ofthe pedestal; a source region of a second conductivity type formed inthe pedestal and extending from the major surface; a drain region of thesecond conductivity type formed in the pedestal and extending from themajor surface, wherein the source region and the drain region are abovethe surface of the semiconductor substrate; a channel region between thesource region and the channel region; a doped region of the firstconductivity type formed in the channel region, wherein the doped regiondoes not contact the source region, the drain region, and the majorsurface, and wherein the doped region has a second dopant concentrationhigher than the first dopant concentration and the doped region isspaced a distance of at least 125 angstroms from the major surface; agate structure formed contiguous with the channel region, wherein thegate structure comprises spacers and a conductive material between thespacers, the gate structure overlaps a portion of the source region anda portion of the drain region; a first electrode coupled to the sourceregion; and a second electrode coupled to the drain region.
 12. Thesemiconductor device of claim 11 wherein the first dopant concentrationis less than 2.0×10¹⁶ atoms/cm³.
 13. The semiconductor device of claim11 wherein the second dopant concentration is at least about 3.0×10¹⁷atoms/cm³.
 14. The semiconductor device of claim 11 wherein the firstconductivity type is p-type and the second conductivity type is n-type.15. The semiconductor device of claim 11 wherein the conductive materialis a material selected from the group consisting of polysilicon,amorphous silicon, tungsten, molybdenum, cobalt, or titanium.
 16. Thesemiconductor device of claim 11 further comprising an additionalsemiconductor device formed in the pedestal.
 17. The semiconductordevice of claim 16 wherein the semiconductor device and the additionalsemiconductor device are electrically coupled together.